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FQD13N10 Datasheet, Fairchild Semiconductor

FQD13N10 mosfet equivalent, 100v n-channel mosfet.

FQD13N10 Avg. rating / M : 1.0 rating-12

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FQD13N10 Datasheet

Features and benefits


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* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested.

Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features
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Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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FQD13N10 Page 1 FQD13N10 Page 2 FQD13N10 Page 3

TAGS

FQD13N10
100V
N-Channel
MOSFET
FQD13N10L
FQD13N06
FQD13N06L
Fairchild Semiconductor

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